Plasmon-phonon hybridization in doped semiconductors and phonon linewidths due to phonon-dressed-electron coupling

The interaction between elementary excitations such as electrons, phonons, and plasmons gives rise to interesting phenomena, where recently developed first-principles computational techniques play an important role. In this presentation, I will talk about first-principles methods to calculate the plasmon-phonon hybridization in doped semiconductors [1] and the non-adiabatic phonon self-energy due to coupling to electrons with finite linewidths [2].   References [1] J.-M. Lihm and C.-H. Park, "Plasmon-Phonon Hybridization in Doped Semiconductors from First Principles." Phys. Rev. Lett. 133, 116402 (2024). [2] C.-H. Park, "Non-adiabatic phonon self-energy due to electrons with finite linewidths," arXiv:2411.12221v1.