Review on diffusion phenomena in ALD, highlighted by Semiconductor Science and Technology
Semiconductor Science and Technology has selected Mato Knez’s review on Diffusion phenomena in Atomic Layer Deposition (ALD) as a highlight of 2012. The magazine’s annual selection by the Editorial Board “represents the breadth and excellence of the work published in 2012. All articles were selected for their presentation of outstanding research, popularity with their online readership and high praise from referees”.
As it is mentioned in the review “Atomic layer deposition is a mature technology for the deposition of conformal thin films. During the ALD process or in a post-treatment, a variety of diffusion phenomena can occur which can not only deteriorate the desired product, but also can be used to fabricate materials or structures in a novel way. This special issue reviews some of the observed diffusion processes and strategies to make use of those.”
The review can be read here.
Original publication Mato Knez 2012 Semicond. Sci. Technol. 27 074001 [doi:10.1088/0268-1242/27/7/074001]
Typical TEM image of Al2O3/ZnO/Al2O3 microtubes (~18/10/44 nm) annealed at 700 °C for 12 h. Broken tubes clearly reveal physical separation and delineation between the inner and outer spinel tubes. The image confirms increased roughness of the spinel layers along the length of the tube, on the surfaces adjacent to the Kirkendall voids. Image adapted with permission. Copyright 2009 by the American Chemical Society.